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| PN4141 Discrete POWER & Signal Technologies PN4141 C BE TO-92 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 30 60 5.0 500 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max PN4141 625 5.0 83.3 200 Units mW mW/C C/W C/W (c) 1997 Fairchild Semiconductor Corporation PN4141 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICEX IBL Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current I C = 10 mA, I B = 0 I C = 10 A, I E = 0 I E = 10 A, IC = 0 VCE = 40 V, VOB = 3.0 V VCE = 40 V, VOB = 3.0 V 30 60 5.0 50 50 V V V nA nA ON CHARACTERISTICS* hFE DC Current Gain VCE = 10 V, IC = 100 A VCE = 10 V, IC = 1.0 mA VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 150 mA VCE = 10 V, IC = 500 mA VCE = 1.0 V, IC = 150 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 35 50 75 100 30 50 300 VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 0.4 1.6 1.3 2.6 V V V V SMALL SIGNAL CHARACTERISTICS Cob hfe Output Capacitance Small-Signal Current Gain VCB = 10 V, f = 100 kHz I C = 20 mA, VCE = 20 V, f = 100 MHz 2.5 8.0 pF SWITCHING CHARACTERISTICS td tr ts tf Delay Time Rise Time Storage Time Fall Time VCC = 30 V, IC = 150 mA, I B1 = 15 mA, VOB (off ) = 0.5 V VCC = 30 V, IC = 150 mA, I B1 = IB2 = 15 mA 10 40 250 60 ns ns ns ns *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% |
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